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Andino-Pavlovsky, V.

Publications and source records attributed to Andino-Pavlovsky, V..

2 recordsLinked to original sources

Cell-scale autonomous CMOS motes for intracellular bioelectronics

Integrating autonomous electronics within single cells has remained beyond the reach of modern bioelectronics. Miniaturization at this scale could transform our ability to study and actuate biological processes at the cellular level, complementing existing molecular and fluorescent approaches. As these devices approach the sub-100-{micro}m length scale, volumetric constraints demand fundamentally new approaches to power delivery and telemetry. Here, we report an optically powered 10-picoliter complementary metal oxide semiconductor (CMOS) mote that operates with a power density of 1 pW/pL, comparable to the metabolic rate of cellular systems. These fully CMOS motes can be manufactured at scale yielding 1000 motes from a 4-mm2 silicon die. Multiple motes can be simultaneously powered and interrogated within a single optical field of view using epifluorescence microscopy. We demonstrate intracellular implantation of these motes within the single-celled mixotrophic dinoflagellate Noctiluca scintillans with negligible cytoplasmic displacement, pushing the boundaries of active CMOS bioelectronics to the intracellular domain and establishing a next-generation of truly cell-scale bioelectronic interfaces TeaserA 10-pL autonomous CMOS mote with fluorescence-based backscatter communication enables cell-scale sensing.

bioengineering↗

Implantable CMOS Deep-Brain Fluorescence Imager with Single-Neuron Resolution

Despite the advantages of optical imaging over electrophysiology, such as cell-type specificity, its application has been limited to the investigation of shallow brain regions (< 2 mm) because of the light scattering property of brain tissue. Passive optical conduits such as graded-index lenses and waveguides have permitted access to deeper locales but with restricted resolution and field of view, while creating massive lesions along the inserted path, with little pathway to improvement in the technology. As an alternative, we present the Acus device, an active implantable complementary metal-oxide-semiconductor (CMOS) neural imager with a 512-pixel silicon image sensor post- processed into a 4.1-mm-long, 120-m-wide shank with a collinear fiber for illumination, which is able to record transient fluorescent signals in deep brain regions at 400 frames/sec. Acus can achieve single-neuron resolution in functional imaging of GCaMP6s-expressing neurons at a frame rate of 400 frames/sec.

neuroscience↗